EFFECT ON GaN/Al0.17Ga0.83N AND Al0.05Ga0.95N/Al0.17Ga0.83N QUANTUM WELLS BY ISOELECTRONIC In DOPING DURING METALORGANIC VAPOR PHASE EPITAXY

The effects of isoelectronic In doping on the structural and optical properties of GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N quantum wells (QWs) on GaN were investigated. QWs were grown by atmospheric pressure metalorganic VPE with either H2 or N2 carrier gas. Without In doping, QWs grown in N2 carrier gas had highly superior crystalline and optical properties to those grown in H2 carrier gas. XRD and photoluminescence studies revealed that In doping improves the crystalline and optical properties of QWs, irrespective of the carrier gas species used during growth. These improvements are more remarkable for In doping into the well layers rather than into the barrier layers. 18 refs.