Fabrication of Nanoscale Cubic SiC Particle Film
Nanoscale cubic SiC particle film is grown on Si substrate by hydrogen plasma sputtering of a SiC target. Before the film growth an amorphous SiC buffer layer of about 100 nm thickness is prepared on the Si substrate. By annealing the buffer layer in hydrogen atmosphere, the nanoscale cubic SiC part...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2000, Vol.39 (11R), p.6202-6207 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Nanoscale cubic SiC particle film is grown on Si substrate by hydrogen plasma sputtering of a SiC target. Before the film growth an amorphous SiC buffer layer of about 100 nm thickness is prepared on the Si substrate. By annealing the buffer layer in hydrogen atmosphere, the nanoscale cubic SiC particle film can be grown on the buffer layer on Si. Particle size, composition and crystallinity of the film depend on the composition, the crystallinity and the surface morphology of the buffer layer. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.6202 |