Fabrication of Nanoscale Cubic SiC Particle Film

Nanoscale cubic SiC particle film is grown on Si substrate by hydrogen plasma sputtering of a SiC target. Before the film growth an amorphous SiC buffer layer of about 100 nm thickness is prepared on the Si substrate. By annealing the buffer layer in hydrogen atmosphere, the nanoscale cubic SiC part...

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Veröffentlicht in:Japanese Journal of Applied Physics 2000, Vol.39 (11R), p.6202-6207
Hauptverfasser: Yong Sun, Yong Sun, Kenta Kirimoto, Kenta Kirimoto, Tatsuro Miyasato, Tatsuro Miyasato
Format: Artikel
Sprache:eng
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Zusammenfassung:Nanoscale cubic SiC particle film is grown on Si substrate by hydrogen plasma sputtering of a SiC target. Before the film growth an amorphous SiC buffer layer of about 100 nm thickness is prepared on the Si substrate. By annealing the buffer layer in hydrogen atmosphere, the nanoscale cubic SiC particle film can be grown on the buffer layer on Si. Particle size, composition and crystallinity of the film depend on the composition, the crystallinity and the surface morphology of the buffer layer.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.6202