Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

Practical design of high-voltage SiC Schottky rectifiers requires an understanding of the device physics that affect the key performance parameters. Forward characteristics of SiC Schottky rectifiers follow thermionic emission theory and are relatively well understood. However, the reverse character...

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Veröffentlicht in:	IEEE transactions on electron devices 1998-07, Vol.45 (7), p.1595-1604
Hauptverfasser:	Schoen, K.P., Woodall, J.M., Cooper, J.A., Melloch, M.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Current density Implants Leakage current Physics Rectifiers Schottky barriers Silicon carbide Temperature dependence Thermionic emission
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