DIELECTRIC INVESTIGATION OF BaTiO3 THIN-FILM CAPACITOR

The dielectric properties of BaTiO3 thin film were investigated on a highly c-axis-oriented epitaxial thin crystal. It was confirmed by XRD that the film thickness was 120 angstroms and that it was high-quality single-crystal film. The spread of crystal orientation of the BaTiO3 thin film was the sa...

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Veröffentlicht in:Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 8, pp. 4839-4842. 2000 Part 1. Vol. 39, no. 8, pp. 4839-4842. 2000, 2000, Vol.39 (8), p.4839-4842
Hauptverfasser: Yoneda, Y, Sakaue, K, Terauchi, H
Format: Artikel
Sprache:eng
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Zusammenfassung:The dielectric properties of BaTiO3 thin film were investigated on a highly c-axis-oriented epitaxial thin crystal. It was confirmed by XRD that the film thickness was 120 angstroms and that it was high-quality single-crystal film. The spread of crystal orientation of the BaTiO3 thin film was the same as that of SrTiO3 substrate. However, the dielectric properties of this thin film were different from those of the BaTiO3 bulk crystals and were explained by the space-charge effect. The space-charge polarization of this film strongly depends on temperature and this behavior was observed after the incubation time had passed. The experimental results are discussed in terms of the interaction between the polarities of domain and space charges. 23 refs.
ISSN:0021-4922
DOI:10.1143/jjap.39.4839