Dry etch improvements in the SOI wafer flow process for IPL stencil mask fabrication

The 4x Ion Projection Lithography (IPL), which is designed to reach sub 100nm resolution on the wafer plane, uses stencil membrane masks out of 150mm SOI (Silicon On Insulator) wafers [1]. The structured circular membranes have a diameter of 126mm and a thickness of 3μm. Results of a new sub-quarter...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Microelectronic engineering 2000-06, Vol.53 (1), p.609-612
Hauptverfasser:	Letzkus, F., Butschke, J., Höfflinger, B., Irmscher, M., Reuter, C., Springer, R., Ehrmann, A., Mathuni, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Lithography, masks and pattern transfer Microelectronic fabrication (materials and surfaces technology) Microelectronics: LSI, VLSI, ULSI integrated circuit fabrication technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The 4x Ion Projection Lithography (IPL), which is designed to reach sub 100nm resolution on the wafer plane, uses stencil membrane masks out of 150mm SOI (Silicon On Insulator) wafers [1]. The structured circular membranes have a diameter of 126mm and a thickness of 3μm. Results of a new sub-quarter micron trench etch and membrane dry etch process are presented and discussed.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/S0167-9317(00)00388-9