Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform

Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform

We report the extraction of carrier lifetimes of 6H-SiC P-i-N rectifiers under high-level injection from reverse recovery measurements. Studies of carrier lifetime at different operating temperatures and injection levels show that the Auger recombination is the dominant process during high-level inj...

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Veröffentlicht in:Materials science forum 1998-01, Vol.264-268, p.1065-1068
Hauptverfasser: Khemka, V., Chow, T. Paul, Ghezzo, Mario, Ramungul, Nudjarin, Kretchmer, James W.
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container_title Materials science forum
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creator Khemka, V.
Chow, T. Paul
Ghezzo, Mario
Ramungul, Nudjarin
Kretchmer, James W.
description We report the extraction of carrier lifetimes of 6H-SiC P-i-N rectifiers under high-level injection from reverse recovery measurements. Studies of carrier lifetime at different operating temperatures and injection levels show that the Auger recombination is the dominant process during high-level injection. An Auger coefficient of 2.5-3.5 x 10 exp -29 cm exp 6/s is estimated from the extracted high-level recombination lifetime. (Author)
doi_str_mv 10.4028/www.scientific.net/MSF.264-268.1065
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title Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
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