Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform

We report the extraction of carrier lifetimes of 6H-SiC P-i-N rectifiers under high-level injection from reverse recovery measurements. Studies of carrier lifetime at different operating temperatures and injection levels show that the Auger recombination is the dominant process during high-level injection. An Auger coefficient of 2.5-3.5 x 10 exp -29 cm exp 6/s is estimated from the extracted high-level recombination lifetime. (Author)