Characteristics of Ferroelectric Transistors with BaMgF4 Dielectric

Characteristics of Ferroelectric Transistors with BaMgF4 Dielectric

The structure and electrical characteristics of metal‐ferroelectric‐semiconductor FET (MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/ drain electrodes and BaMgF4 film as a gate dielectric. The polysilicon source and drain were built‐u...

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Veröffentlicht in:ETRI journal 1998-06, Vol.20 (2), p.241-249
Hauptverfasser: Lyu, Jong‐Son, Jeong, Jin‐Woo, Kim, Kwang‐Ho, Kim, Bo‐Woo, Yoo, Hyung Joun
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_end_page 249
container_issue 2
container_start_page 241
container_title ETRI journal
container_volume 20
creator Lyu, Jong‐Son
Jeong, Jin‐Woo
Kim, Kwang‐Ho
Kim, Bo‐Woo
Yoo, Hyung Joun
description The structure and electrical characteristics of metal‐ferroelectric‐semiconductor FET (MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/ drain electrodes and BaMgF4 film as a gate dielectric. The polysilicon source and drain were built‐up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about 0.6 μC/cm2 and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I ‐ V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.
doi_str_mv 10.4218/etrij.98.0198.0208
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source Wiley Free Content; EZB-FREE-00999 freely available EZB journals
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Characteristics of Ferroelectric Transistors with BaMgF4 Dielectric
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