Characteristics of Ferroelectric Transistors with BaMgF4 Dielectric
The structure and electrical characteristics of metal‐ferroelectric‐semiconductor FET (MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/ drain electrodes and BaMgF4 film as a gate dielectric. The polysilicon source and drain were built‐u...
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Veröffentlicht in: | ETRI journal 1998-06, Vol.20 (2), p.241-249 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The structure and electrical characteristics of metal‐ferroelectric‐semiconductor FET (MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/ drain electrodes and BaMgF4 film as a gate dielectric. The polysilicon source and drain were built‐up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about 0.6 μC/cm2 and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I ‐ V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode. |
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ISSN: | 1225-6463 2233-7326 |
DOI: | 10.4218/etrij.98.0198.0208 |