Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC

We report on calculations of the anisotropy of the electron Hall mobility and its temperature dependence in single crystals of 6H- and 4H-SiC assuming parabolic conduction bands of cigar-shaped constant energy surfaces having three different effective masses in directions perpendicular to each other. Our results agree well with the experimentally determined anisotropic Hall mobility in 6H- and 4H-SiC. (Author)