Nucleation and ordering of MoSi sub 2 on Si(100)

Molybdenum deposition on clean Si(100) with a fluence as low as 1-4 monolayers suffices to nucleate molybdenum disilicide. At 640 deg C, disilicide growth is initiated by the formation of small crystallites of hexagonal MoSi sub 2 , separated by clean, but roughened, Si(100)-2mult1, as revealed by scanning tunneling microscopy, Auger electron spectroscopy, and glancing angle x-ray diffraction. At 770 deg C, molybdenum deposition leads to tetragonal MoSi sub 2 preferentially oriented with respect to the silicon substrate. Copyright (c) 1995 Elsevier Science B.V. All rights reserved.