V-band monolithic AlGaAs/InGaAs/GaAs PM-HFET mixers
MMIC microstrip single‐gate cold mixers and dual‐gate mixers have been developed, fabricated, and measured in V band. They have been processed on 0.15 or 0.25‐μm‐gate AlGaAs/InGaAs/GaAs pseudomorphic HFET technology. The devices are formed from an exhaustive methodology based on complex characteriza...
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| Veröffentlicht in: | Microwave and optical technology letters 1997-06, Vol.15 (3), p.139-144 |
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| container_title | Microwave and optical technology letters |
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| creator | Kolanowski, C. Allam, R. De Jaeger, J. C. Bourne-Yaonaba, P. Dourlens, C. Favre, J. |
| description | MMIC microstrip single‐gate cold mixers and dual‐gate mixers have been developed, fabricated, and measured in V band. They have been processed on 0.15 or 0.25‐μm‐gate AlGaAs/InGaAs/GaAs pseudomorphic HFET technology. The devices are formed from an exhaustive methodology based on complex characterizations, specific nonlinear modeling and reverse engineering. A comparison for each MMIC is described from the chip process, from the same technology, under the same specifications. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 15: 139–144, 1997. |
| doi_str_mv | 10.1002/(SICI)1098-2760(19970620)15:3<139::AID-MOP6>3.0.CO;2-H |
| format | Article |
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| ispartof | Microwave and optical technology letters, 1997-06, Vol.15 (3), p.139-144 |
| issn | 0895-2477 1098-2760 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | CAD mixers MMIC |
| title | V-band monolithic AlGaAs/InGaAs/GaAs PM-HFET mixers |
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