V-band monolithic AlGaAs/InGaAs/GaAs PM-HFET mixers

MMIC microstrip single‐gate cold mixers and dual‐gate mixers have been developed, fabricated, and measured in V band. They have been processed on 0.15 or 0.25‐μm‐gate AlGaAs/InGaAs/GaAs pseudomorphic HFET technology. The devices are formed from an exhaustive methodology based on complex characteriza...

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Veröffentlicht in:Microwave and optical technology letters 1997-06, Vol.15 (3), p.139-144
Hauptverfasser: Kolanowski, C., Allam, R., De Jaeger, J. C., Bourne-Yaonaba, P., Dourlens, C., Favre, J.
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Sprache:eng
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Zusammenfassung:MMIC microstrip single‐gate cold mixers and dual‐gate mixers have been developed, fabricated, and measured in V band. They have been processed on 0.15 or 0.25‐μm‐gate AlGaAs/InGaAs/GaAs pseudomorphic HFET technology. The devices are formed from an exhaustive methodology based on complex characterizations, specific nonlinear modeling and reverse engineering. A comparison for each MMIC is described from the chip process, from the same technology, under the same specifications. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 15: 139–144, 1997.
ISSN:0895-2477
1098-2760
DOI:10.1002/(SICI)1098-2760(19970620)15:3<139::AID-MOP6>3.0.CO;2-H