V-band monolithic AlGaAs/InGaAs/GaAs PM-HFET mixers
MMIC microstrip single‐gate cold mixers and dual‐gate mixers have been developed, fabricated, and measured in V band. They have been processed on 0.15 or 0.25‐μm‐gate AlGaAs/InGaAs/GaAs pseudomorphic HFET technology. The devices are formed from an exhaustive methodology based on complex characteriza...
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Veröffentlicht in: | Microwave and optical technology letters 1997-06, Vol.15 (3), p.139-144 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | MMIC microstrip single‐gate cold mixers and dual‐gate mixers have been developed, fabricated, and measured in V band. They have been processed on 0.15 or 0.25‐μm‐gate AlGaAs/InGaAs/GaAs pseudomorphic HFET technology. The devices are formed from an exhaustive methodology based on complex characterizations, specific nonlinear modeling and reverse engineering. A comparison for each MMIC is described from the chip process, from the same technology, under the same specifications. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 15: 139–144, 1997. |
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ISSN: | 0895-2477 1098-2760 |
DOI: | 10.1002/(SICI)1098-2760(19970620)15:3<139::AID-MOP6>3.0.CO;2-H |