Microcrystalline SiC films grown by electron cyclotron resonance chemical vapor deposition at low temperatures

The characteristics of microcrystalline silicon carbide (µ c-SiC) films deposited using an electron cyclotron resonance chemical vapor deposition system at low temperatures have been investigated. The effect of microwave (MW) power on the SiC crystallinity is studied. According to the results of Fourier transform infrared absorption spectra, plan-view transmission electron microscopy, and the plasmon loss peaks in X-ray photoelectron spectroscopy, Si-C bonds form when the MW power is above 500 W for deposition at 500° C. The SiC crystallinity improves monotonically with MW power. The amount of incorporated carbon atoms in the grown films increases with MW power up to the concentration of 50% at 1500 W. The dependence of the surface morphology and the mean roughness of the films on MW power is examined using the contact mode atomic force microscopy.