Electrical characteristics and annealing study of boron-doped polycrystalline diamond films
In this study, annealing was applied to as-grown boron-doped diamond films. The current-voltage (I-V) characteristics of the Al /boron-doped diamond films were also investigated. The conductivity of films was examined to determine the effect of annealing on boron-doped diamond films. Experimental re...
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| Veröffentlicht in: | Journal of the Electrochemical Society 1995, Vol.142 (12), p.L223-L225 |
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| container_issue | 12 |
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| container_title | Journal of the Electrochemical Society |
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| creator | SHENG-HSIUNG CHEN SHEN-LI CHEN MING-HSING TSAI SHYU, J. J CHIA-FU CHEN |
| description | In this study, annealing was applied to as-grown boron-doped diamond films. The current-voltage (I-V) characteristics of the Al /boron-doped diamond films were also investigated. The conductivity of films was examined to determine the effect of annealing on boron-doped diamond films. Experimental results indicated that the activation energy for the as-deposited diamond films (intrinsic or light boron-doped) is about 0.38 eV. After annealing, the activation energy did not change. However, the activation energy of the heavily doped films changed remarkably to 0.014 eV after annealing. FTIR and cathodoluminescence were performed to understand more clearly the correlation between the activation energy and the annealing effect on B-doped diamond films. These results revealed that for the lightly B-doped films, the boron atoms were effectively activated at the substitutional site. For the heavily doped case, boron was initially located in an inactive site (e.g., grain boundary, interstitial or clustering sites) and would diffuse into the substitutional site after annealing at 900 C. 20 refs. |
| doi_str_mv | 10.1149/1.2048504 |
| format | Article |
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J ; CHIA-FU CHEN</creator><creatorcontrib>SHENG-HSIUNG CHEN ; SHEN-LI CHEN ; MING-HSING TSAI ; SHYU, J. J ; CHIA-FU CHEN</creatorcontrib><description>In this study, annealing was applied to as-grown boron-doped diamond films. The current-voltage (I-V) characteristics of the Al /boron-doped diamond films were also investigated. The conductivity of films was examined to determine the effect of annealing on boron-doped diamond films. Experimental results indicated that the activation energy for the as-deposited diamond films (intrinsic or light boron-doped) is about 0.38 eV. After annealing, the activation energy did not change. However, the activation energy of the heavily doped films changed remarkably to 0.014 eV after annealing. FTIR and cathodoluminescence were performed to understand more clearly the correlation between the activation energy and the annealing effect on B-doped diamond films. These results revealed that for the lightly B-doped films, the boron atoms were effectively activated at the substitutional site. 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J</creatorcontrib><creatorcontrib>CHIA-FU CHEN</creatorcontrib><title>Electrical characteristics and annealing study of boron-doped polycrystalline diamond films</title><title>Journal of the Electrochemical Society</title><description>In this study, annealing was applied to as-grown boron-doped diamond films. The current-voltage (I-V) characteristics of the Al /boron-doped diamond films were also investigated. The conductivity of films was examined to determine the effect of annealing on boron-doped diamond films. Experimental results indicated that the activation energy for the as-deposited diamond films (intrinsic or light boron-doped) is about 0.38 eV. After annealing, the activation energy did not change. However, the activation energy of the heavily doped films changed remarkably to 0.014 eV after annealing. FTIR and cathodoluminescence were performed to understand more clearly the correlation between the activation energy and the annealing effect on B-doped diamond films. These results revealed that for the lightly B-doped films, the boron atoms were effectively activated at the substitutional site. For the heavily doped case, boron was initially located in an inactive site (e.g., grain boundary, interstitial or clustering sites) and would diffuse into the substitutional site after annealing at 900 C. 20 refs.</description><subject>Cathodoluminescence, ionoluminescence</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Doping and impurity implantation in iii-v and ii-vi semiconductors</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other luminescence and radiative recombination</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNqNkLtOxDAQRS0EEsuj4A9SICSKLJ7YjjclWi0PaSUaqCiiiR9g5MTBzhb5e4x2RU0xmhnp3FscQq6ALgF4cwfLivKVoPyILKDhopQAcEwWlAIreS3glJyl9JVfWHG5IO8bb9QUnUJfqE-MqCYTXZqcSgUOOs9g0Lvho0jTTs9FsEUXYhhKHUajizH4WcU5TegzZArtsA85Zp3v0wU5seiTuTzsc_L2sHldP5Xbl8fn9f22VAxWU4mmttAxU1NZo6qo7mpd1RxQCqk51RaM5VSwmkvV2U6AFchpUwuq8mElOyc3-94xhu-dSVPbu6SM9ziYsEttJTlw1oh_gSxrzODtHlQxpBSNbcfoeoxzC7T99dxCe_Cc2etDKaZs0UYclEt_gaphglaU_QApDH0h</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>SHENG-HSIUNG CHEN</creator><creator>SHEN-LI CHEN</creator><creator>MING-HSING TSAI</creator><creator>SHYU, J. 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J ; CHIA-FU CHEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-ae6f1b3e6076ac20db6d2641a757d40df1ef4053647cbfb51f5a409650c5a4f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Cathodoluminescence, ionoluminescence</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Doping and impurity implantation in iii-v and ii-vi semiconductors</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other luminescence and radiative recombination</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SHENG-HSIUNG CHEN</creatorcontrib><creatorcontrib>SHEN-LI CHEN</creatorcontrib><creatorcontrib>MING-HSING TSAI</creatorcontrib><creatorcontrib>SHYU, J. J</creatorcontrib><creatorcontrib>CHIA-FU CHEN</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Electronics & Communications Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SHENG-HSIUNG CHEN</au><au>SHEN-LI CHEN</au><au>MING-HSING TSAI</au><au>SHYU, J. J</au><au>CHIA-FU CHEN</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical characteristics and annealing study of boron-doped polycrystalline diamond films</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1995</date><risdate>1995</risdate><volume>142</volume><issue>12</issue><spage>L223</spage><epage>L225</epage><pages>L223-L225</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><abstract>In this study, annealing was applied to as-grown boron-doped diamond films. The current-voltage (I-V) characteristics of the Al /boron-doped diamond films were also investigated. The conductivity of films was examined to determine the effect of annealing on boron-doped diamond films. Experimental results indicated that the activation energy for the as-deposited diamond films (intrinsic or light boron-doped) is about 0.38 eV. After annealing, the activation energy did not change. However, the activation energy of the heavily doped films changed remarkably to 0.014 eV after annealing. FTIR and cathodoluminescence were performed to understand more clearly the correlation between the activation energy and the annealing effect on B-doped diamond films. These results revealed that for the lightly B-doped films, the boron atoms were effectively activated at the substitutional site. For the heavily doped case, boron was initially located in an inactive site (e.g., grain boundary, interstitial or clustering sites) and would diffuse into the substitutional site after annealing at 900 C. 20 refs.</abstract><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.2048504</doi></addata></record> |
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| subjects | Cathodoluminescence, ionoluminescence Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Low-field transport and mobility piezoresistance Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other luminescence and radiative recombination Physics Structure of solids and liquids crystallography |
| title | Electrical characteristics and annealing study of boron-doped polycrystalline diamond films |
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