The I Centre: A Hydrogen Related Defect in Silicon

The I-line luminescence system with zero-phonon transitions at 965.0 and 967.4 meV is created when Czochralski silicon is electron irradiated and subsequently annealed at temperatures greater than 400 C. We report here that the center contains two nonequivalent carbon atoms and one hydrogen atom and that the uniaxial stress and Zeeman perturbations are consistent with a paramagnetic center possessing monoclinic I symmetry. We propose that the core of the center is a C-C-H complex, similar to that of the T-center, perturbed by the presence of an oxygen atom. (Author)