AFM observation of self-assembled monolayer films on GaAs (110)

We have confirmed that a self-assembled monolayer (SAM) film of octadecanethiol (ODT), CH 3 (CH 2 ) 17 SH, can be formed on a cleaved GaAs (110) surface, by using an atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS). Circular depressions were observed on the surface after film formation. The area of the circular depressions increased with immersion time, indicating that the solution oxidized the interface between ODT molecules and the GaAs surface, resulting in removal of ODT molecules. The oxidation was considerably faster in pure ethanol solution than that in ODT solution, demonstrating that the SAM film protects the GaAs surface from oxidation. High-resolution lateral force microscope (LFM) images revealed a periodic structure that had two types of lines: periodic lines 0.57 nm apart and lines rotated 55° with respect to them. A structural model of the SAM successfully explained both the features in high-resolution LFM images and the depression depth observed in AFM images.