Study of the electrical properties of thin film transistors based on nickel phthalocyanine

Fabrication and characterization of Schottky gated and metal semiconductor field-effect transistors based on molecular materials have been reported. In this paper, we present results on the transient properties of thin film transistors. The presence of a delay time when drain voltage is applied is studied. A discussion about the functioning principle of this class of devices is presented. Finally, the effect of both environment and different film treatments on the electrical characteristics is also investigated.