Comparison of the properties of BN films synthesized by inductively coupled r.f. and microwave plasmas

Thin films of boron nitride are synthesized by two plasma-enhanced chemical vapour deposition techniques: inductively coupled r.f. plasma (13.56 MHz) and microwave plasma (2.45 GHz). We study the composition (impurity level, B N ratio), the proportion of c-BN phase in the films and other properties...

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Veröffentlicht in:	Thin solid films 1995-12, Vol.270 (1), p.118-123
Hauptverfasser:	Kiel, F., Cotarelo, M., Delplancke, M.P., Winand, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Adhesion Boron nitride Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Optical spectroscopy Physics Plasma processing and deposition
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Zusammenfassung:	Thin films of boron nitride are synthesized by two plasma-enhanced chemical vapour deposition techniques: inductively coupled r.f. plasma (13.56 MHz) and microwave plasma (2.45 GHz). We study the composition (impurity level, B N ratio), the proportion of c-BN phase in the films and other properties of those films as a function of various process parameters. Two boron and two nitrogen precursors are compared: trimethyl borazine and diborane, dini trogen and ammonia, respectively. The advantages and disadvantages of each combinations are presented. The deposition process is followed by optical emission spectroscopy. Adhesion is one of the main problems encountered for films containing c-BN.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/0040-6090(95)06909-7