Operation of electroluminescent porous silicon diodes as surface-emitting cold cathodes

Cold electron emission properties of porous silicon (PS) electroluminescent diodes have been investigated as a function of the top metal electrode thickness, surface work function, and the thickness of PS layer. It is shown that the best thicknesses for Pt and Au electrodes are 50∼80 Å. The emission...

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Bibliographische Detailangaben

Veröffentlicht in:	Thin solid films 1997-04, Vol.297 (1), p.314-316
Hauptverfasser:	Sheng, Xia, Ozaki, Tsuyoshi, Koyama, Hideki, Koshida, Nobuyoshi, Yoshikawa, Takamasa, Yamaguchi, Masataka, Ogasawara, Kiyohide
Format:	Artikel
Sprache:	eng
Schlagworte:	Cold cathodes Electroluminescence Porous silicon
Online-Zugang:	Volltext
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