Preparation and characterization of PbTiO sub(3) thin film by thermal diffusion from multilayer structure

Effects of component layer thickness variation in 3-layer structure (TiO sub(2)/Pb/TiO sub(2)) on the phase formation and dielectric properties in PbTiO sub(3) films were investigated. Multilayer films of total thickness of 1000 angstroms were grown on Si substrate by RF sputtering at room temperature and RTA (Rapid Thermal Annealing) process followed in order to form PbTiO sub(3) by thermal diffusion. PbTiO sub(3) phase begins to form at 500 degree C. Unreacted TiO sub(2) and pyrochlore phase decrease as the content of Pb in the film increases. Reaction at the interface between film and substrate is slightly dependent on the component layer thickness variation and morphology of interface is relatively sharp compared to the films grown by conventional processing. Relative dielectric constant is linearly proportional to the Pb content in the films. Crater shape defects on the surface were generated during RTA.