The interaction of atomic deuterium with sulphur passivated InP(100) − (1 × 1)

S-passivated InP(100) crystals have been exposed, at various temperatures, to atomic deuterium. The sulphur overlayer is found to be removed by this treatment, with all of the sulphur being removed at sufficiently high exposures. Samples which are dosed at 300 or 400 K yield a D-terminated (1 × 1) surface, while those exposed at temperatures > 500 K exhibit a (4 × 2) reconstruction. The surface morphologies of the samples dosed at 300 and 400 K are unchanged from that of the original wafer, while those treated at higher temperatures show the presence of macroscopic In islands.