Cycling effects in nitrogen doped tetrahedral amorphous carbon non-volatile memory cells

Recently, we reported on reversible non-volatile memory effects in nitrogen doped tetrahedral amorphous carbon (ta-C:N) thin films, and the properties of 1-bit memory cells fabricated to utilize such effects. In this paper, we investigate the electrical stability of ta-C:N devices with respect to the effects of many repetitive read, write, and erase cycles on their ON and OFF state resistances.