Defects and nanocrystals generated by Si implantation into a-SiO2

Defects and nanocrystals generated by Si implantation into a-SiO2

Electrical charge-trapping characteristics are studied in thermal oxides that were implanted with Si, experimentally using electron spin resonance (ESR), capacitance versus voltage (CV) measurements, TEM, atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using pla...

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Veröffentlicht in:IEEE transactions on nuclear science 2000-12, Vol.47 (6), p.2269-2275
Hauptverfasser: Nicklaw, C J, Pagey, M P, Pantelides, S T, Fleetwood, D M, Schrimpf, R D, Galloway, K F, Wittig, J E, Howard, B M, Taw, E, McNeil, W H
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Sprache:eng
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Zusammenfassung:Electrical charge-trapping characteristics are studied in thermal oxides that were implanted with Si, experimentally using electron spin resonance (ESR), capacitance versus voltage (CV) measurements, TEM, atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using plane waves. Our study examines possible defect structures associated with excess Si in thermal oxides. (Author)
ISSN:0018-9499
DOI:10.1109/23.903764