Influence of the aminated conditions on the pH sensitivity of silica and amorphous silicon film
Silicon nitride has been widely used as a pH sensitive membrane of the ion sensitive field effect transistor (ISFET) thanks to the high reactivity of the SiNH 2 sites to the H + ions. In this paper, we report experimental results on the H + sensitivity of silica and amorphous silicon aminated films,...
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| Veröffentlicht in: | Journal of the European Ceramic Society 1997, Vol.17 (15), p.2021-2024 |
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| container_title | Journal of the European Ceramic Society |
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| creator | Baccar, Z.M. Jaffrezic-Renault, N. Fourmond, E. Lemiti, M. Grekov, F.F. |
| description | Silicon nitride has been widely used as a pH sensitive membrane of the ion sensitive field effect transistor (ISFET) thanks to the high reactivity of the SiNH
2 sites to the H
+ ions. In this paper, we report experimental results on the H
+ sensitivity of silica and amorphous silicon aminated films, obtained by the photo-CVD. We have studied the dependence of their response to pH as a function of the time and the temperature of amination of the film. The response of the aminated films (silica and amorphous silicon) is quasi-Nernstianfor amination exposure time higher than 1 min, deposited at temperature lower than 200 °C. A theoretical model of deposition is presented. It can explain the influence of the deposition conditions. |
| doi_str_mv | 10.1016/S0955-2219(97)00052-6 |
| format | Article |
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2 sites to the H
+ ions. In this paper, we report experimental results on the H
+ sensitivity of silica and amorphous silicon aminated films, obtained by the photo-CVD. We have studied the dependence of their response to pH as a function of the time and the temperature of amination of the film. The response of the aminated films (silica and amorphous silicon) is quasi-Nernstianfor amination exposure time higher than 1 min, deposited at temperature lower than 200 °C. A theoretical model of deposition is presented. It can explain the influence of the deposition conditions.</description><identifier>ISSN: 0955-2219</identifier><identifier>EISSN: 1873-619X</identifier><identifier>DOI: 10.1016/S0955-2219(97)00052-6</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><ispartof>Journal of the European Ceramic Society, 1997, Vol.17 (15), p.2021-2024</ispartof><rights>1997</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-aa3e80b2312cda2ee7a1ecf7df74fd3a31292aaea6a82bf0d64ecd149f5852233</citedby><cites>FETCH-LOGICAL-c338t-aa3e80b2312cda2ee7a1ecf7df74fd3a31292aaea6a82bf0d64ecd149f5852233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0955-2219(97)00052-6$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,778,782,3539,4012,27906,27907,27908,45978</link.rule.ids></links><search><contributor>WCA</contributor><creatorcontrib>Baccar, Z.M.</creatorcontrib><creatorcontrib>Jaffrezic-Renault, N.</creatorcontrib><creatorcontrib>Fourmond, E.</creatorcontrib><creatorcontrib>Lemiti, M.</creatorcontrib><creatorcontrib>Grekov, F.F.</creatorcontrib><title>Influence of the aminated conditions on the pH sensitivity of silica and amorphous silicon film</title><title>Journal of the European Ceramic Society</title><description>Silicon nitride has been widely used as a pH sensitive membrane of the ion sensitive field effect transistor (ISFET) thanks to the high reactivity of the SiNH
2 sites to the H
+ ions. In this paper, we report experimental results on the H
+ sensitivity of silica and amorphous silicon aminated films, obtained by the photo-CVD. We have studied the dependence of their response to pH as a function of the time and the temperature of amination of the film. The response of the aminated films (silica and amorphous silicon) is quasi-Nernstianfor amination exposure time higher than 1 min, deposited at temperature lower than 200 °C. A theoretical model of deposition is presented. It can explain the influence of the deposition conditions.</description><issn>0955-2219</issn><issn>1873-619X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqFkMtKAzEUhoMoWC-PIMxKdDGay9yyEilqCwUXKrgLaXJCIzPJmEwLfXszHXHr6sB__u-QfAhdEXxHMKnu3zAvy5xSwm94fYsxLmleHaEZaWqWV4R_HqPZX-UUncX4hTGpMeczJJbOtFtwCjJvsmEDmeyskwPoTHmn7WC9i5l3h1W_yCK4mMKdHfYjEG1rlcyk04nzod_4bZzChBjbdhfoxMg2wuXvPEcfz0_v80W-en1Zzh9XuWKsGXIpGTR4TRmhSksKUEsCytTa1IXRTKacUylBVrKha4N1VYDSpOCmbEpKGTtH19PdPvjvLcRBdDYqaFvpIL1J0JqWlJMiFcupqIKPMYARfbCdDHtBsBh1ioNOMboSvBYHnaJK3MPEQfrFzkIQUdnRm7YB1CC0t_9c-AEYl362</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Baccar, Z.M.</creator><creator>Jaffrezic-Renault, N.</creator><creator>Fourmond, E.</creator><creator>Lemiti, M.</creator><creator>Grekov, F.F.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>1997</creationdate><title>Influence of the aminated conditions on the pH sensitivity of silica and amorphous silicon film</title><author>Baccar, Z.M. ; Jaffrezic-Renault, N. ; Fourmond, E. ; Lemiti, M. ; Grekov, F.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-aa3e80b2312cda2ee7a1ecf7df74fd3a31292aaea6a82bf0d64ecd149f5852233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baccar, Z.M.</creatorcontrib><creatorcontrib>Jaffrezic-Renault, N.</creatorcontrib><creatorcontrib>Fourmond, E.</creatorcontrib><creatorcontrib>Lemiti, M.</creatorcontrib><creatorcontrib>Grekov, F.F.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the European Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Baccar, Z.M.</au><au>Jaffrezic-Renault, N.</au><au>Fourmond, E.</au><au>Lemiti, M.</au><au>Grekov, F.F.</au><au>WCA</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of the aminated conditions on the pH sensitivity of silica and amorphous silicon film</atitle><jtitle>Journal of the European Ceramic Society</jtitle><date>1997</date><risdate>1997</risdate><volume>17</volume><issue>15</issue><spage>2021</spage><epage>2024</epage><pages>2021-2024</pages><issn>0955-2219</issn><eissn>1873-619X</eissn><abstract>Silicon nitride has been widely used as a pH sensitive membrane of the ion sensitive field effect transistor (ISFET) thanks to the high reactivity of the SiNH
2 sites to the H
+ ions. In this paper, we report experimental results on the H
+ sensitivity of silica and amorphous silicon aminated films, obtained by the photo-CVD. We have studied the dependence of their response to pH as a function of the time and the temperature of amination of the film. The response of the aminated films (silica and amorphous silicon) is quasi-Nernstianfor amination exposure time higher than 1 min, deposited at temperature lower than 200 °C. A theoretical model of deposition is presented. It can explain the influence of the deposition conditions.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/S0955-2219(97)00052-6</doi><tpages>4</tpages></addata></record> |
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| title | Influence of the aminated conditions on the pH sensitivity of silica and amorphous silicon film |
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