Stable water-floating transistor with recyclability

Electronic wastes from used devices containing environmentally hazardous materials are an immediate concern for the sustainable development of electronic and sensor industries. To address this, a highly controllable and dedicated electronic module should be devised, that allows systematic recollecti...

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Veröffentlicht in:Materials horizons 2023-02, Vol.1 (2), p.491-498
Hauptverfasser: Yu, Ilhwan, Quyen, Vu Thi, Ko, Jaehyoung, Lee, Dong Su, Jeon, Dae-Young, Joo, Yongho
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Sprache:eng
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Zusammenfassung:Electronic wastes from used devices containing environmentally hazardous materials are an immediate concern for the sustainable development of electronic and sensor industries. To address this, a highly controllable and dedicated electronic module should be devised, that allows systematic recollection of as many components from the original device for their reuse. Here, we report the total recycling of an electronic device, exploiting a water-floating system that is based on a water-compatible semiconductor as an active material. To do so, we developed a system for stable electronics on the water surface. The floating semiconductor features a tunable morphology on the water surface, and is constructed into a water-floating gated transistor (WFGT) and water floating sensor (WFS), exhibiting an on-current of 4.2 × 10 −5 A and an on/off ratio of ∼10 3 . The device showed high recyclability over 25 cycles, with an efficiency of 99 ± 0.9% within 1 cycle and 92 ± 0.7% within 30 cycles. Furthermore, the device was also found to be stable for over 10 days. Our system has the potential to be an eco-friendly, cost-effective, and scalable device that is fully recyclable, which can be applied in areas once thought of as being beyond the scope of current semiconductor technology. We demonstrate a breakthrough construction of a truly ecofriendly, substrate-free, all-component recyclable water-floating gate transistor (WFGT), where pure water works as a dielectric layer and s-SWCNTs as a semiconducting medium.
ISSN:2051-6347
2051-6355
DOI:10.1039/d2mh00733a