Infrared Induced Emission From Silicon Quantum Wires

Infrared Induced Emission From Silicon Quantum Wires

We present the first findings of infrared induced emission from silicon quantum wires due to the formation of a correlation gap in the DOS (density of states) of a degenerate hole gas. The quantum wires of this type are created by electrostatic confining potential inside ultrashallow p+n junctions w...

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Veröffentlicht in:Materials science forum 1997-01, Vol.258-263, p.1607-1612
Hauptverfasser: Gehlhoff, W., Malyarenko, A.M., Chaikina, E.I., Klyachkin, L.E., Markov, I.I., Bagraev, Nikolai T.
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container_end_page 1612
container_issue
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container_title Materials science forum
container_volume 258-263
creator Gehlhoff, W.
Malyarenko, A.M.
Chaikina, E.I.
Klyachkin, L.E.
Markov, I.I.
Bagraev, Nikolai T.
description We present the first findings of infrared induced emission from silicon quantum wires due to the formation of a correlation gap in the DOS (density of states) of a degenerate hole gas. The quantum wires of this type are created by electrostatic confining potential inside ultrashallow p+n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of nonequilibrium boron diffusion. (Author)
doi_str_mv 10.4028/www.scientific.net/MSF.258-263.1607
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