Infrared Induced Emission From Silicon Quantum Wires

We present the first findings of infrared induced emission from silicon quantum wires due to the formation of a correlation gap in the DOS (density of states) of a degenerate hole gas. The quantum wires of this type are created by electrostatic confining potential inside ultrashallow p+n junctions w...

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Veröffentlicht in:	Materials science forum 1997-01, Vol.258-263, p.1607-1612
Hauptverfasser:	Gehlhoff, W., Malyarenko, A.M., Chaikina, E.I., Klyachkin, L.E., Markov, I.I., Bagraev, Nikolai T.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Zusammenfassung:	We present the first findings of infrared induced emission from silicon quantum wires due to the formation of a correlation gap in the DOS (density of states) of a degenerate hole gas. The quantum wires of this type are created by electrostatic confining potential inside ultrashallow p+n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of nonequilibrium boron diffusion. (Author)
ISSN:	0255-5476 1662-9752 1662-9752
DOI:	10.4028/www.scientific.net/MSF.258-263.1607