Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies

In this work, the phase formation is compared for Ni- and Co-silicidation with and without Ti cap. In addition, the electrical performance of Ni-silicidation with and without Ti-cap is investigated and compared to the performance of a Co-silicidation process with a Ti cap that has the same Si consum...

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Veröffentlicht in:	Microelectronic engineering 2000, Vol.50 (1), p.103-116
Hauptverfasser:	Lauwers, A, Besser, P, Gutt, T, Satta, A, de Potter, M, Lindsay, R, Roelandts, N, Loosen, F, Jin, S, Bender, H, Stucchi, M, Vrancken, C, Deweerdt, B, Maex, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Co-silicide Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Ni-silicide Phase formation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sheet resistance Silicon consumption
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Beschreibung
Zusammenfassung:	In this work, the phase formation is compared for Ni- and Co-silicidation with and without Ti cap. In addition, the electrical performance of Ni-silicidation with and without Ti-cap is investigated and compared to the performance of a Co-silicidation process with a Ti cap that has the same Si consumption. The lateral confinement of the silicide in the active areas is also studied.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/S0167-9317(99)00270-1