CHARACTERISTICS OF DUAL POLYMETAL (W/WNx/POLY-Si) GATE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FOR 0.1 mu m DYNAMIC RANDOM ACCESS MEMORY TECHNOLOGY

Authors developed a dual polymetal (W/WNx/poly-Si) gate complementary MOS down to a 0.15 mu m gate length. The short-channel effects are effectively suppressed and a saturation current of 300 mu A/mu m is obtained for nMOS and 110 mu A/mu m is observed for pMOS at a 0.15 mu m gate length. The lower saturation current of pMOS is attributed both to the p+-doped poly gate depletion and to the hole mobility degradation due to the increased vertical electric field in the surface-channel pMOS. B penetration is not observed with pure SiO2 gate dielectrics. The gate induced drain leakage current could be markedly reduced by optimizing the well doping below the gate edge. 14 refs.