Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and s...

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Veröffentlicht in:Solid-state electronics 2002-04, Vol.46 (4), p.597-599
Hauptverfasser: Chen, C.H., Fang, Y.K., Yang, C.W., Ting, S.F., Tsair, Y.S., Chang, C.N., Hou, T.H., Wang, M.F., Yu, M.C., Lin, C.L., Chen, S.C., Yu, C.H., Liang, M.S.
Format: Artikel
Sprache:eng
Schlagworte:
Nitride
PDE
Poly-gate depletion
Poly-SiGe
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Zusammenfassung:The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(01)00262-3