Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
A buried tungsten (W) structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window regions is excellent. GaN with a striped W metal pattern is easily decomposed ab...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2000, Vol.39 (5B), p.L449-L452 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A buried tungsten (W) structure with GaN is successfully
obtained by epitaxial lateral overgrowth (ELO) technique via
low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The
selectivity of GaN growth on the window regions is excellent. GaN
with a striped W metal pattern is easily decomposed above the low
temperature of 500°C by the catalytic effect of W. It is
difficult to bury the W mask because severe damage occurs in the GaN
epilayer under the mask. It is found that employing an underlying
AlGaN/GaN heterostructure with a narrow W stripe mask width
(L/S=2/2 µm) leads the epilayer to be free from
damage, resulting in a good W buried structure. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.L449 |