Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy

A buried tungsten (W) structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window regions is excellent. GaN with a striped W metal pattern is easily decomposed ab...

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Veröffentlicht in:Japanese Journal of Applied Physics 2000, Vol.39 (5B), p.L449-L452
Hauptverfasser: Haino, Masahiro, Yamaguchi, Motoo, Miyake, Hideto, Motogaito, Atsushi, Hiramatsu, Kazumasa, Kawaguchi, Yasutoshi, Sawaki, Nobuhiko, Iyechika, Yasushi, Maeda, Takayoshi
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Sprache:eng
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Zusammenfassung:A buried tungsten (W) structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window regions is excellent. GaN with a striped W metal pattern is easily decomposed above the low temperature of 500°C by the catalytic effect of W. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that employing an underlying AlGaN/GaN heterostructure with a narrow W stripe mask width (L/S=2/2 µm) leads the epilayer to be free from damage, resulting in a good W buried structure.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L449