Magnetization reversal process in thin Co nanowires

The magnetoresistance of single Co nanowires of various widths is investigated at low temperatures applying magnetic fields μ 0 H up to 4.5 T. The in-plane longitudinal magnetoresistance shows pronounced features at coercive fields H c explained by the anisotropic magnetoresistance indicating the ma...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of magnetism and magnetic materials 2002-02, Vol.240 (1), p.297-300
Hauptverfasser:	Hausmanns, B., Krome, T.P., Dumpich, G., Wassermann, E.F., Hinzke, D., Nowak, U., Usadel, K.D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Domain effects, magnetization curves, and hysteresis Exact sciences and technology Magnetic properties and materials Magnetization curves, magnetization reversal, hysteresis, barkhausen and related effects Magnetization reversal Nanostructures Numerical simulation studies Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The magnetoresistance of single Co nanowires of various widths is investigated at low temperatures applying magnetic fields μ 0 H up to 4.5 T. The in-plane longitudinal magnetoresistance shows pronounced features at coercive fields H c explained by the anisotropic magnetoresistance indicating the magnetization reversal process. Monte Carlo simulations present the magnetization distribution during the reversal process, revealing different mechanisms depending on the wire width.
ISSN:	0304-8853
DOI:	10.1016/S0304-8853(01)00783-1