Ultra-thin gate oxide reliability projections

Ultra-thin gate oxide reliability projections

We describe the reliability projection methods currently used and show that 1.6 nm oxides are sufficiently reliable even if soft breakdown is considered the point of failure. We also explore the possibility of using oxides after soft breakdown.

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Bibliographische Detailangaben
Veröffentlicht in:Solid-state electronics 2002-03, Vol.46 (3), p.321-328
Hauptverfasser: Weir, B.E., Alam, M.A., Silverman, P.J., Baumann, F., Monroe, D., Bude, J.D., Timp, G.L., Hamad, A., Ma, Y., Brown, M.M., Hwang, D., Sorsch, T.W., Ghetti, A., Wilk, G.D.
Format: Artikel
Sprache:eng
Schlagworte:
Gate oxide
Reliability
TDDB
Ultra-thin
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Beschreibung
Zusammenfassung:We describe the reliability projection methods currently used and show that 1.6 nm oxides are sufficiently reliable even if soft breakdown is considered the point of failure. We also explore the possibility of using oxides after soft breakdown.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(01)00103-4