Micro-raman study of the damage in nanopatterned GaAs(001)

A single-point diamond machine fabricated patterns with a series of equispaced lines in an area of nominally 10 mum x 10 mum. On a single GaAs wafer, patterns having 80, 100, 120, and 140 lines were machined. Sample patterns were formed with 5-mg and 7-mg loads. AFM characterized the surface morphology and depth of cut of these patterns as a function of load and indicated a consistent depth of cut for a given load. Subsurface damage in these layers was compared using the ratio of the TO to the LO phonon peak intensities in the mu-Raman spectra with and without annealing. 9 refs.