Low-Temperature MOCVD of Conducting, Micrometer-Thick, Silver Films

Silver layers up to 3 mu m thick have been deposited at 250-510 deg C using a simple powder flash evaporation MOCVD procedure with a silver pivalate as the volatile precursor. Carbon-free deposits could be obtained at temperatures > 310 deg C. A very high deposition rate of 10 mu m h exp -1 has b...

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Veröffentlicht in:Chemical vapor deposition 2002-03, Vol.8 (2), p.74-78
Hauptverfasser: Samoilenkov, S, Stefan, M, Wahl, G
Format: Artikel
Sprache:eng
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Zusammenfassung:Silver layers up to 3 mu m thick have been deposited at 250-510 deg C using a simple powder flash evaporation MOCVD procedure with a silver pivalate as the volatile precursor. Carbon-free deposits could be obtained at temperatures > 310 deg C. A very high deposition rate of 10 mu m h exp -1 has been achieved. The silver layers were dense and conducting. Properties of silver piva-late, and the influence of deposition temperature on film microstructure, are discussed. The procedure is a cheap and robust route to silver coatings. (Silicon, copper, and glass substrates.)
ISSN:0948-1907
DOI:10.1002/1521-3862(20020304)8:2<74::AID-CVDE74>3.0.CO;2-B