Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy

Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy

The low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy (SSMBE) were discussed. It was found that the laser emitted 1.28 km light output and demonstrated a low threshold current density of 210 A/cm sup 2. The low threshold current density ws attributed...

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Veröffentlicht in:Electronics letters 2002-10, Vol.38 (22), p.1354-1355
Hauptverfasser: Liu, Po-Wei, Lee, Ming-Han, Lin, Hao-Hsiung, Chen, Jhe-Ren
Format: Artikel
Sprache:eng
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Zusammenfassung:The low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy (SSMBE) were discussed. It was found that the laser emitted 1.28 km light output and demonstrated a low threshold current density of 210 A/cm sup 2. The low threshold current density ws attributed to the use of cracked Sb monomer (Sb sub 1) as the Sb source in the growth of GaAsSb layers. Internal quantum efficiency and internal loss were measured to be 6208% and 3.45 cm sup -1, respectively.
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20020932