ELECTRONIC STRUCTURES OF Bi4Ti3O12 THIN FILM AND SINGLE CRYSTAL DETERMINED BY RESONANT SOFT-X-RAY EMISSION SPECTROSCOPY

Soft-X-ray emission spectroscopy (SXES) spectra were measured for ferroelectric Bi4Ti3O12 (BIT) single crystal and highly c-axis oriented BIT thin film. In both BIT single crystal and thin film, the Ti 3d and O 2p partial density of states (PDOS) in the valence band region were observed in O 1s and...

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Veröffentlicht in:Japanese Journal of Applied Physics, Part 1 Part 1, 2002-11, Vol.41 (11B), p.7195-7197
Hauptverfasser: Higuchi, T, Kudoh, K, Takeuchi, T, Masuda, Y, Harada, Y, Shin, S, Tsukamoto, T
Format: Artikel
Sprache:eng
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Zusammenfassung:Soft-X-ray emission spectroscopy (SXES) spectra were measured for ferroelectric Bi4Ti3O12 (BIT) single crystal and highly c-axis oriented BIT thin film. In both BIT single crystal and thin film, the Ti 3d and O 2p partial density of states (PDOS) in the valence band region were observed in O 1s and Ti 2p SXES spectra. The energy position of the Ti 3d state overlapped with that of the O 2p state, indicating the occurrence of the hybridization effect between the Ti 3d and O 2p states. The Ti 3d PDOS decreases in BIT thin film. This fact indicates that the hybridization effect of BIT thin film is smaller than that of BIT single crystal. 21 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.7195