ELECTRONIC STRUCTURES OF Bi4Ti3O12 THIN FILM AND SINGLE CRYSTAL DETERMINED BY RESONANT SOFT-X-RAY EMISSION SPECTROSCOPY
Soft-X-ray emission spectroscopy (SXES) spectra were measured for ferroelectric Bi4Ti3O12 (BIT) single crystal and highly c-axis oriented BIT thin film. In both BIT single crystal and thin film, the Ti 3d and O 2p partial density of states (PDOS) in the valence band region were observed in O 1s and...
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Veröffentlicht in: | Japanese Journal of Applied Physics, Part 1 Part 1, 2002-11, Vol.41 (11B), p.7195-7197 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Soft-X-ray emission spectroscopy (SXES) spectra were measured for ferroelectric Bi4Ti3O12 (BIT) single crystal and highly c-axis oriented BIT thin film. In both BIT single crystal and thin film, the Ti 3d and O 2p partial density of states (PDOS) in the valence band region were observed in O 1s and Ti 2p SXES spectra. The energy position of the Ti 3d state overlapped with that of the O 2p state, indicating the occurrence of the hybridization effect between the Ti 3d and O 2p states. The Ti 3d PDOS decreases in BIT thin film. This fact indicates that the hybridization effect of BIT thin film is smaller than that of BIT single crystal. 21 refs. |
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ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.41.7195 |