Highly sensitive Hall magnetic sensor microsystem in CMOS technology

Highly sensitive Hall magnetic sensor microsystem in CMOS technology

A highly sensitive magnetic sensor microsystem based on a Hall device is presented. This microsystem consists of a Hall device improved by an integrated magnetic concentrator and new circuit architecture for the signal processing. It provides an amplification of the sensor signal with a resolution b...

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Veröffentlicht in:IEEE journal of solid-state circuits 2002-02, Vol.37 (2), p.151-159
Hauptverfasser: Randjelovic, Z.B., Kayal, M., Popovic, R., Blanchard, H.
Format: Artikel
Sprache:eng
Schlagworte:
Amplification
Cancellation
Circuits
CMOS
CMOS technology
Crystallography
Devices
Gain
Hall effect devices
Halls
Integrated circuit technology
Magnetic devices
Magnetic sensors
Mechanical sensors
Sensor phenomena and characterization
Sensors
Stress
Switching circuits
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Beschreibung
Zusammenfassung:A highly sensitive magnetic sensor microsystem based on a Hall device is presented. This microsystem consists of a Hall device improved by an integrated magnetic concentrator and new circuit architecture for the signal processing. It provides an amplification of the sensor signal with a resolution better than 30 /spl mu/V and a periodic offset cancellation while the output of the microsystem is available in continuous time. This microsystem features an overall magnetic gain of 420 V/T.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.982421