Surface morphology of nitrided thin thermal SiO2 studied by atomic force microscopy

Nitridation is obtained by thermal annealing in nitriding atmosphere in conventional furnace immediately after thermal oxidation of Si substrates. The characterisation performed concerns the oxide surface, as well as the region where N is incorporated, the latter exposed using a diluted HF solution. Significant differences in the morphology of the nitrided layer are observed, which are a function of the nitridation process applied. They allow authors to correlate the morphology to the N incorporation mechanisms that have occurred. 17 refs.