Structural and electrical properties of SrBi2Nb2O9 thin films prepared by chemical aqueous solution at low temperature

SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursor method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallised during firing at 700 C. Microstructure and morphological evaluation were followed by grazing...

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Veröffentlicht in:Materials letters 1999-07, Vol.40 (1), p.33-38
Hauptverfasser: ZANETTI, S. M, ARAUJO, E. B, LEITE, E. R, LONGO, E, VARELA, J. A
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Sprache:eng
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Zusammenfassung:SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursor method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallised during firing at 700 C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), SEM and AFM. The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 micron in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarisation (Pr) and coercive field (Ec) were 5.6 microCoulomb/cm2 and 100 kV/cm, respectively. 16 refs.
ISSN:0167-577X
1873-4979
DOI:10.1016/S0167-577X(99)00045-2