HgI2 polycrystalline films for digital X-ray imagers

HgI2 polycrystalline films for digital X-ray imagers

This paper describes recent results obtained with mercuric iodide (HgI2) polycrystalline films that we have produced. The ultimate goal of this effort is to develop a new detector technology for digital X-ray imaging based on HgI2 polycrystalline films coupled to large-area flat-panel amorphous sili...

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Veröffentlicht in:IEEE transactions on nuclear science 2002-02, Vol.49 (1), p.160-1164
Hauptverfasser: Iwanczyk, J.S, Patt, B.E, Tull, C.R, MacDonald, L.R, Skinner, N, Hoffman, E.J, naro, L
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container_title IEEE transactions on nuclear science
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creator Iwanczyk, J.S
Patt, B.E
Tull, C.R
MacDonald, L.R
Skinner, N
Hoffman, E.J
naro, L
description This paper describes recent results obtained with mercuric iodide (HgI2) polycrystalline films that we have produced. The ultimate goal of this effort is to develop a new detector technology for digital X-ray imaging based on HgI2 polycrystalline films coupled to large-area flat-panel amorphous silicon, thin-film transistor-addressed readout arrays. We have employed two approaches for producing the polycrystalline films: 1) thermal evaporation (sublimation) and 2) deposition of films from various solutions. The 50- to 150-micron-thick films were characterized with respect to their electrical properties and in response to ionizing radiation. The leakage current was about 40 pA/sq cm at an operating bias voltage of about 50 V. Signals from the HgI2 polycrystalline detectors, in response to ionizing radiation, compare favorably to the best published results for all high Z polycrystalline films grown elsewhere, including TlBr, PbI2, and HgI2. (Author)
doi_str_mv 10.1109/TNS.2002.998745
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The ultimate goal of this effort is to develop a new detector technology for digital X-ray imaging based on HgI2 polycrystalline films coupled to large-area flat-panel amorphous silicon, thin-film transistor-addressed readout arrays. We have employed two approaches for producing the polycrystalline films: 1) thermal evaporation (sublimation) and 2) deposition of films from various solutions. The 50- to 150-micron-thick films were characterized with respect to their electrical properties and in response to ionizing radiation. The leakage current was about 40 pA/sq cm at an operating bias voltage of about 50 V. Signals from the HgI2 polycrystalline detectors, in response to ionizing radiation, compare favorably to the best published results for all high Z polycrystalline films grown elsewhere, including TlBr, PbI2, and HgI2. 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