High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

AlGaN/GaN high-electron mobility transistors (HEMTs) show decreases in extrinsic transconductance, drain-source current threshold voltage, and gate current as a result of irradiation with 40 MeV protons at doses equivalent to decades in low-earth orbit. The data are consistent with the protons creating deep electron traps that increase the HEMT channel resistance. Postirradiation annealing at 300 degree C was able to restore [similar to]70% of the initial g sub(m) and I sub(DS) values in HEMTs receiving proton doses of 5 x 10 super(10) cm super(-2).