Synthetic semiconductor diamond electrodes: a study of electrochemical behavior of boron-doped single crystals grown at a high temperature and high pressure

Impedance spectroscopy and electrochemical kinetics in Fe(CN) 6 3−/4− and Ce 3+/4+ redox solutions are investigated for boron-doped `high temperature, high pressure' diamond single crystals of moderate resistivity. The comparison with thin-film chemical-vapor-deposited diamond electrodes studied earlier proved both types of diamond electrode to behave in a similar manner. In particular, a constant phase element is characteristic of their impedance behavior. Redox reactions in the above-listed systems proceed mainly as irreversible reactions on the diamond electrodes.