Determination of deep trap concentration at channel–substrate interface in GaAs MESFET using sidegating measurements

Determination of deep trap concentration at channel–substrate interface in GaAs MESFET using sidegating measurements

An analytical expression that describes the sidegating effect in a GaAs MESFET, (i.e. relates the drain current to the substrate voltage) is obtained. Based on this expression, a simple method for determining the concentration of vacant deep traps at the channel–substrate interface from sidegating m...

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Veröffentlicht in:Solid-state electronics 2002-09, Vol.46 (9), p.1463-1466
Hauptverfasser: Khuchua, Nina P, Khvedelidze, Levan V, Gorev, Nikolai B, Privalov, Evgeny N, Shur, Michael S
Format: Artikel
Sprache:eng
Schlagworte:
Channel–substrate interface
Deep traps
MESFET
Sidegating
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Zusammenfassung:An analytical expression that describes the sidegating effect in a GaAs MESFET, (i.e. relates the drain current to the substrate voltage) is obtained. Based on this expression, a simple method for determining the concentration of vacant deep traps at the channel–substrate interface from sidegating measurements is proposed and applied for device characterization and parameter extraction.
ISSN:0038-1101
1879-2405
DOI:10.1016/S0038-1101(02)00060-6