Development of an all-nitride magnetic tunnel junction

We are developing an all-nitride magnetic tunnel junction. Here, we report on the growth and properties of γ′-Fe 4N, α″-Fe 16N 2 and Cu 3N. Epitaxial γ′-Fe 4N films were grown by molecular beam epitaxy of iron in the presence of atomic nitrogen from an RF atomic source. Layers of Cu 3N were grown in...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 2002-02, Vol.240 (1), p.445-447
Hauptverfasser:	Borsa, D.M., Grachev, S., Kerssemakers, J.W.J., Boerma, D.O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Domain effects, magnetization curves, and hysteresis Epitaxial Exact sciences and technology Iron nitrides Magnetic films Magnetic properties and materials Magnetization curves, hysteresis, Barkhausen and related effects Magnetization curves, magnetization reversal, hysteresis, barkhausen and related effects Materials science MBE Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Thin films
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Zusammenfassung:	We are developing an all-nitride magnetic tunnel junction. Here, we report on the growth and properties of γ′-Fe 4N, α″-Fe 16N 2 and Cu 3N. Epitaxial γ′-Fe 4N films were grown by molecular beam epitaxy of iron in the presence of atomic nitrogen from an RF atomic source. Layers of Cu 3N were grown in a similar fashion. The α″-Fe 16N 2 phase was synthesized by nitriding epitaxial iron layers. Up to now, Cu 3N and α″-Fe 16N 2 were not obtained as pure phases.
ISSN:	0304-8853
DOI:	10.1016/S0304-8853(01)00901-5