Effects of recovery annealing on reliability of SrBi sub(2)Ta sub(2)O sub(9) based ferroelectric memory devices

The effects of high and low thermal budget recovery annealing processes on electrical and reliability characteristics of SrBi sub(2)Ta sub(2)O sub(9) based ferroelectric memory devices were discussed. Both high and low thermal budget recovery annealing processes showed a similar effect on ferroelectric properties at high temperature ([similar to]150 degree C). The analysis of reliability characteristics at high temperature showed significant difference for high and low thermal budget annealing processes.