Rare earth doped high temperature ceramic selective emitters
As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study develops a spectral emittance model for films of rare earth containing materials. Although there are several possib...
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Veröffentlicht in: | Journal of the European Ceramic Society 1999-01, Vol.19 (13), p.2551-2562 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study develops a spectral emittance model for films of rare earth containing materials. Although there are several possible rare earth doped high temperature materials, this study was confined to rare earth aluminum garnets. Good agreement between experimental and theoretical spectral emittances was found for erbium, thulium and erbium–holmium aluminum garnets. Spectral emittances of these films are sensitive to temperature differences across the film. Emitter efficiency is also a sensitive function of temperature. For thulium aluminum garnet the efficiency is 0·38 at 1700 K but only 0·19 at 1262 K. |
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ISSN: | 0955-2219 1873-619X |
DOI: | 10.1016/S0955-2219(99)00096-5 |