Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells

Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells

Authors determine the effect of annealing on highly strained GaInAs/GaAs quantum wells (QWs) grown on a (100) n-type GaAs substrate by low-pressure MOVPE. Highly strained QWs suffer from degradation caused by high-temperature thermal annealing due to its high strain, and overgrowth temperature shoul...

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Veröffentlicht in:Japanese Journal of Applied Physics 2002-06, Vol.41 (Part 2, No. 6A), p.L612-L614
Hauptverfasser: Kondo, Takashi, Arai, Masakazu, Azuchi, Munechika, Uchida, Takeshi, Miyamoto, Tomoyuki, Koyama, Fumio
Format: Artikel
Sprache:eng
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Zusammenfassung:Authors determine the effect of annealing on highly strained GaInAs/GaAs quantum wells (QWs) grown on a (100) n-type GaAs substrate by low-pressure MOVPE. Highly strained QWs suffer from degradation caused by high-temperature thermal annealing due to its high strain, and overgrowth temperature should be decreased. The comparison of the annealing effects with and without a GaInAs strained buffer layer (SBL) inserted below QWs was carried out. The SBL is effective in maintaining good crystal quality of highly strained QWs after the overgrowth. 14 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.L612