A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases
The shallow trench isolation (STI) is one of the key technologies for VLSI. The threshold voltage V th for surface-channel STI MOSFET's becomes lower with decreasing channel width W, which is called the inverse narrow-channel effect (INCE). Also, there is a hump in the subthreshold characterist...
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| Veröffentlicht in: | Solid-state electronics 1999-11, Vol.43 (11), p.2061-2066 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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